Paper Title
Analysis on Physical Properties of Gallium Nitride (GAN)-based Light Emitting Diodes for High Power Applications

Abstract
The paper presents the analysis on physical properties of Gallium Nitride (GaN)-based Light Emitting Diodes. The main research problem in this study is mainly focused on the GaN LED design for high power application. The existing condition for fabricated GaN LEDs has some limitations for physical performance for high power applications and defect species on fabricated semiconductor devices in laboratory experience. The research solution to solve the current research problem is accomplished by analyzing the physical parameters from experimental studies in the laboratory. The emphasizes on the physical properties of GaN LEDs have been utilized the parameters from the fabricated device design and crystal growth condition. The numerical analyses are conducted based on the MATLAB language. The results confirm that the performance of developed LED meets the experimental design for real world applications. Keywords - Gallium Nitride, Light Emitting Diodes, Physical Properties, Numerical Analysis, MATLAB Language